Yangjie Technology has recently launched a new-generation 1200V automotive-grade discrete IGBT in TO-247-4L package. Adopting an advanced micro-trench process platform, the product achieves greatly optimized conduction loss, excellent parameter consistency and superior reliability.
In addition, to suit PTC applications in high-voltage vehicle platforms, the creepage distance between collector and emitter (CE) terminals of the device has been specially optimized.
Product Features
Adopting a refined micro-trench process platform, delivering a cost-effective chip solution.
Voltage rating: 1200V; current rating: 40A @ Tc = 100℃.
Low conduction loss, suitable for medium and low frequency application scenarios.
Excellent short-circuit withstand capability.
Optimized creepage distance between collector and emitter (CE), reaching over 8mm.
The CE creepage distance of traditional TO-247-3L devices is approximately 3mm. By adopting the TO-247-4L package, the CE creepage distance is increased to more than 8mm, which greatly improves its adaptability for high-voltage platforms of electric vehicles.
