CN EN
Home
About Us
Newpros
IGBT Discrete For PTC of Auto Industry
IGBT Discrete For PTC of Auto Industry Back
PDF

Introduction 1.SuperTO-220standardpackaging
2.VCES=1200V,IC=40A~80A;
3.TheproductismainlyusedinPTC application;
4.ThehighfrequencyIGBTmodulesandothermarket mainstream product sarecompletely pintopin alternatives;
5.EnvironmentallyfriendlycomplyingwithRoHSstandards;
Features 1.Trench-FSstructurehasbetterbalanceofblockingcapacityandLowsaturationvoltage;
2.Maximum junctiontemperatureTjmax=175℃;
3.HighefficiencycharacteristicswithverylowVce(sat)andslowturn-offcharacteristics,
suitableforPTC applications;;
SPECIFICATION

DGR40N120ATL0AQ DGR80N120ATL1BQ DGS40N120ATL0AQ DGS80N120ATL1BQ

Related new products

Low VCE(sat) 3A Bipolar Transistor

DFN2510 & DF0603 Package ESD Protection Series

ESDM Series ESD Protection Diodes with Ultra-low Junction Capacitance Value of 0.05 pF

High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard

Portable energy storage power supply special plug-in type fast recovery bridge

SGT N60V MOSFET for Clean Energy Field

N100V MOSFET for Automotive Electronic Applications

TO-252 Package Power Transistor for Motor Driver & High Power Frequency Converter

N+P Dual 30V Trench MOSFET for Fan Control

MOSFET for High Power DC-DC