CN EN
Home
About Us
Newpros
New N100V MOSFET for PD Power Supply
New N100V MOSFET for PD Power Supply Back
PDF

Introduction YangJie technology recently launched a series of N100V mosfet products for PD power supplies.The products adopt specially optimized SGT technology, with low Rdson and Qg, significantly reducing forward voltage drop and switching losses,while enhancing the avalanche resistance of the mosfet.
Features 1.The product utilizes optimized SGT technology, featuring low on-resistance and excellent switching performance.
2.The product adopts PDFN5*6-8L package, suitable for PD power synchronous rectifier applications
3.For various working states of power supply applications, optimize the EAS capability of MOS products to enhance their reliability.
SPECIFICATION

YJG4D6G10H YJG5D2G10H YJG6D3G10H YJG7D4G10H YJG8D0G10H

Related new products

Small Signal Schottky and Switching Diode in DFN0603 Package

SGT N60V MOSFET for Clean Energy Field

New plug-in rectifier bridge -JC that follows the trend of flattening

Optimization Design of Rectifier Bridge —— New Package GBU-L

80A/1200V IGBT Discrete for Automotive PTC

Portable energy storage power supply special plug-in type fast recovery bridge

IGBT for Servo Controllers and Frequency Converter, with High Current Half-controlled and Braking Capability

Micro-pattern trenches IGBT for Servo controller/frequency converter/industrial power supply

650V Super Junction N-Channel MOSFET

SOD-323HE Diode for Automotive 、Home Appliances, Etc