CN EN
Home
About Us
Newpros
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter
Micro-pattern Trenches IGBT for Photovoltaic Inverter & Energy Storage Inverter Back
PDF

Introduction Yangjie Technology recently launched a new generation of TO-247PLUS packaged 160A 650V discrete IGBT. The product adopts 1.6um micro-pattern trenches process platform, greatly improving power density,having low conduction and switching loss. It provides high-power discrete IGBT solutions for the photovoltaic inverter and
energy storage inverter.
Features 1. Adopting 1.6um micro-pattern trenches process platform;
2. 650V breakdown voltage,Ic=160A@Tc=100℃;
3. Low conduction loss,low switching loss;
4. Copacked with Very soft,fast recovery antiparallel diode;
SPECIFICATION

DGQ160N65CTS2A

Related new products

NP – sealed MOSFET for cooling fan

Constant VC ESD Product

SOD-123FL package power ESD

IGBT high frequency series C1 module

SOD-123HE TVS Diode

New N150V SGT MOSFETs

TOLL Package SiC MOSFET

Small signal SOT-723 new package

SOD-123HE SMD Type TVS Products

3GBJ Three-Phase Bridge Rectifier