CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete;
2、The voltage level is 650V, the current level is 50A@Tc=100℃;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications;
4、Low conduction loss, low switching loss, high reliability;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V;
4、Low conduction loss, low switching loss, meet the high frequency application conditions;
5、The latest generation of micro trench design, a cost-effective product;
SPECIFICATION

DGW50N65CTL0

Related new products

N40V SGT MOSFET for Automotive Motor Drives

80A/1200V IGBT Discrete for Automotive PTC

Small signal SOT-723 new package

IGBT high frequency series C1 module

Small Signal Schottky and Switching Diode in DFN0603 Package

Low Power SCR for Small Appliances

1200V 80 mΩ SIC MOSFET

SGT N60V MOSFET for Clean Energy Field

N+P Dual 30V Trench MOSFET for Fan Control

MT-W Series Three Phase Bridge Rectifier