Product Cross
CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
 PDF

Introduction 1、TO-247package 50A 650V IGBT discrete；
2、The voltage level is 650V, the current level is 50A@Tc=100℃；
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications；
4、Low conduction loss, low switching loss, high reliability；
5、Use environmentally friendly materials and meet RoHS standards；
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ；
3、High voltage 650V；
4、Low conduction loss, low switching loss, meet the high frequency application conditions；
5、The latest generation of micro trench design, a cost-effective product；
SPECIFICATION

DGW50N65CTL0

Related new products

New plug-in rectifier bridge -JC that follows the trend of flattening

Low VCE(sat) 3A Bipolar Transistor

IGBT Fast Series

JC

GBU Package Extended 35A-50A High Current Series Products

N150V MOSFET for Industrial Control

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

P 40V Trench MOSFET for Load Switch Application

High junction temperature ultrafast recovery diode

N100V MOSFET for Automotive Electronic Applications
About Us
Company History Honor Compliance Newpros
Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module Press-pack Device SiC 4/5″wafer 6″wafer Integrated circuit
Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication
Quality
Technical Resources Quality Document Reliability Test PCN/EOL Event
Investment
Overview Reports Stock market GDR OFFERING
Follow Us
Yangjie Technology SZ300373

11.88

▼RMB
2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

WeChat QR code

©2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 苏ICP备12043831号-1   苏公网安备 32100302010286号
Powered by SE