CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application Back
PDF

Introduction 1、TO-247package 50A 650V IGBT discrete;
2、The voltage level is 650V, the current level is 50A@Tc=100℃;
3、It is mainly used for PV/Eenergy Storage/ EV charger and other high-frequency applications;
4、Low conduction loss, low switching loss, high reliability;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、Tjmax=175℃;
2、Positive temperature coefficient ;
3、High voltage 650V;
4、Low conduction loss, low switching loss, meet the high frequency application conditions;
5、The latest generation of micro trench design, a cost-effective product;
SPECIFICATION

DGW50N65CTL0

Related new products

3GBJ Three-Phase Bridge Rectifier

High Temperature Resistant Schottky Diode

MOSFET for High Power DC-DC

YBS2G Gulling Patch Rectifier Bridge

SOD-323HE SMD Type TVS Products

SOD-123HE TVS Diode

LFPAK56D MOSFET for Automotive

SGT N60V MOSFET for Clean Energy Field

TO-220AC Internal Insulated Package Series Ultra-Fast Recovery Diode

N40V SGT MOSFET for Automotive Motor Drives