120V SGT process N-channel MOSFET | Yangjie Electronic Technology

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120V SGT process N-channel MOSFET

120V SGT process N-channel MOSFET Back

PDF

Introduction 1. Adopt Yangjie Technology SGT special process to optimize the performance of internal conduction resistance (Rdson) and gate charge (Qg) according to the requirements of motor drive and power supply application, reduce conduction loss and switching loss, and improve system efficiency;
2. Solve the problem of high side voltage spike caused by high DI/DT when high-speed Gan power supply is applied, and improve the overall reliability of the product.

Features 1. Adopt Yangjie SGT special process design, with higher process stability and reliability;
2. The series products have faster switching speed, smaller gate charge and higher application efficiency;
3. Using PDFN5060 package, better thermal resistance characteristics.

SPECIFICATION

YJG88G12A

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