Product Cross
CN EN
Home
About Us
Newpros
120V SGT process N-channel MOSFET
120V SGT process N-channel MOSFET Back
 PDF

Introduction 1. Adopt Yangjie Technology SGT special process to optimize the performance of internal conduction resistance (Rdson) and gate charge (Qg) according to the requirements of motor drive and power supply application, reduce conduction loss and switching loss, and improve system efficiency;
2. Solve the problem of high side voltage spike caused by high DI/DT when high-speed Gan power supply is applied, and improve the overall reliability of the product.
Features 1. Adopt Yangjie SGT special process design, with higher process stability and reliability;
2. The series products have faster switching speed, smaller gate charge and higher application efficiency;
3. Using PDFN5060 package, better thermal resistance characteristics.
SPECIFICATION

YJG88G12A

Related new products

IGBT Fast Series

3GBJ Three-Phase Bridge Rectifier

SOD-123HE TVS Diode

New N40V SGT MOSFETs for Sweeper

100V TOLL Package MOSFET

LFPAK56D MOSFET for Automotive

Micro-pattern Trenches IGBT for Servo Controller & Frequency Converter & Industrial Power Supply

ESD Products for Panel Ports

120V SGT process N-channel MOSFET

SMBF Diode
About Us
Company History Honor Compliance Newpros
Products
Automotive Rectifier Protection Diode Small Signal Mosfet IGBT Module Press-pack Device SiC 4/5″wafer 6″wafer Integrated circuit
Application
Automotive Clean Energy Industrial Power Supply Home Appliance Security Smart Meter Telecommunication
Quality
Technical Resources Quality Document Reliability Test PCN/EOL Event
Investment
Overview Reports Stock market GDR OFFERING
Follow Us
Yangjie Technology SZ300373

11.88

▼RMB
2023-03-24 15:59:10

Tel： 400 106 0780(8:00~12:00 13:30~17:30)

E-mail： yangjie@21yangjie.com

Address： 6 Heye West Road, Hanjiang District, Yangzhou

WeChat QR code

©2023 Yangzhou Yangjie Electronic Technology Co.,Ltd. 苏ICP备12043831号-1   苏公网安备 32100302010286号
Powered by SE