Yangjie Technology has newly launched a series of N100V MOSFETs for PD power supplies.

With specially optimized SGT technology, these devices deliver low on-resistance Rds(on) and gate charge Qg, greatly reducing conduction and switching losses while improving the avalanche withstand capability of MOSFETs.

• Adopting the latest optimized SGT process, the product features low internal resistance and excellent switching characteristics.

• Packaged in PDFN5×6-8L, it is suitable for synchronous rectification applications of PD power supplies.

• Optimized EAS capability of MOS devices for various operating conditions of power supply applications to enhance product reliability.