Yangjie Technology has recently launched 1200V 120mΩ SiC MOSFET products, available in three package types: TO-247AB, TO-247-4L, and TO-263-7L. Designed for power electronics applications that demand ultimate energy efficiency and system compactness, these devices perfectly balance conduction loss and switching performance, making them an ideal replacement for traditional silicon-based super-junction MOSFETs

Leveraging the physical properties of silicon carbide (SiC), this device features extremely low parasitic capacitance and ultra-fast switching speed. Its body diode has an exceptionally low reverse recovery charge (Qrr), which significantly reduces switching losses, enabling power supply systems to easily achieve high-frequency designs and greatly improve power density.

The device supports operation at junction temperatures up to 175°C. Compared to silicon devices of equivalent specifications, it greatly reduces heatsink size and even enables fanless cooling in some low power density designs, thereby lowering overall system cost.